Kingston Technology ValueRAM KVR26S19S6/4 memory module 4 GB 1 x 4 GB DDR4 2666 MHz
- Power Supply: VDD = 1.2V Typical
- VDDQ = 1.2V Typical
- VPP = 2.5V Typical
- VDDSPD = 2.2V to 3.6V
- Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
- Low-power auto self refresh (LPASR)
- Data bus inversion (DBI) for data bus
- On-die VREFDQ generation and calibration
- Single-rank
- On-board I2 serial presence-detect (SPD) EEPROM
- 8 internal banks; 2 groups of 4 banks each
- Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
- Selectable BC4 or BL8 on-the-fly (OTF)
- Fly-by topology
- Terminated control command and address bus
- PCB: Height 1.18” (30.00mm)
- RoHS Compliant and Halogen-Free
This document describes ValueRAM’s KVR26S19S6/4 as a 512M x 64-bit (4GB) DDR4-2666 CL19 SDRAM (Synchronous DRAM), 1Rx16, memory module, based on four 512M x 16-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-2666 timing of 19-19-19 at 1.2V. This 260-pin SODIMM uses gold contact fingers.
| Features |
| Country of origin |
Taiwan |
| Programming power voltage (VPP) |
2.5 V |
| Row active time |
32 ns |
| Refresh row cycle time |
350 ns |
| Row cycle time |
45.75 ns |
| Memory voltage |
1.2 V |
| Memory ranking |
1 |
| CAS latency |
19 |
| ECC |
No |
| Memory form factor |
260-pin SO-DIMM |
| Component for |
Laptop |
| Memory clock speed |
2666 MHz |
| Internal memory type |
DDR4 |
| Memory layout (modules x size) |
1 x 4 GB |
| Internal memory |
4 GB |
| Buffered memory type |
Unregistered (unbuffered) |
| Operational conditions |
| Storage temperature (T-T) |
-55 – 100 °C |
| Operating temperature (T-T) |
0 – 85 °C |
| General |
| Product family |
ValueRAM |
| Technical details |
| Compliance certificates |
RoHS |
| Sustainability |
| Doesn’t contain |
Halogen |
| Weight & dimensions |
| Height |
30 mm |
| Depth |
2.45 mm |
| Width |
69.6 mm |
| Logistics data |
| Harmonized System (HS) code |
84733020 |
